PART |
Description |
Maker |
R1LV0816ASB-5SI R1LV0816ASB-7SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
M40Z111 M40Z111MH M40Z111SH M40Z111W M40Z111WMH M4 |
NVRAM CONTROLLER for up to TWO LPSRAM
|
意法半导 STMicroelectronics
|
M58WR064EB M58WR064ET M58WR064E-ZBT M58WR064ET80ZB |
64 Mbit 4Mb x 16 / Multiple Bank / Burst 1.8V Supply Flash Memory 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory HDR P R 4P PW N 1X4 .100TQ BERGSTRIP .100CC SR STRAIGHT
|
SGS Thomson Microelectronics ST Microelectronics 意法半导
|
M40Z111 M40Z111MH6 M40Z111MH6TR M40Z111WMH6 M40Z11 |
NVRAM CONTROLLER FOR UP TO TWO LPSRAM 5V OR 3V NVRAM SUPERVISOR FOR UP TO TWO LPSRAMs
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM) 4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的(256 × 18)的SRAMMb的(256 × 18)同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM) 4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的(128K的36)的SRAMMb的(128K的36)寄存器锁存模式的同步的CMOS静态RAM)的
|
IBM Microeletronics International Business Machines, Corp.
|
IT8673F |
Advanced Input / Output (Advanced I/O) Preliminary Specification V0.5 GT 35C 35#12 SKT PLUG
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
M29KW064E90ZA1T M29KDCL3-32T M29KW064E M29KW064E11 |
From old datasheet system 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory 64MBIT (4MBX16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASHMEMORY 64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|